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Modification of band alignment at interface of AlyGa1-ySb/AlxGa1-xAs type-II quantum dots by concentrated sunlight in intermediate band solar cells with separated absorption and depletion regions

机译：alyGa1-ysb / alxGa1-xas界面处的能带对准的改进在中频太阳能中通过聚光太阳光的II型量子点具有分离的吸收和耗尽区的细胞

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Kechiantz, A.; Afanasev, A.; Lazzari, J. -L.;
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年度 2013
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1. Band alignment and conversion efficiency in Si/Ge type-II quantum dot intermediate band solar cells [J] . A M Kechiantz, L M Kocharyan, H M Kechiyants Nanotechnology . 2007,第40期

机译：Si / Ge II型量子点中带太阳能电池的能带对准和转换效率
2. Band alignment and conversion efficiency in Si/Ge type-II quantum dot intermediate band solar cells [J] . Kechiantz AM, Kocharyan LM, Kechiyants HM Nanotechnology . 2007,第40期

机译：Si / Ge II型量子点中带太阳能电池的能带对准和转换效率
3. Quantum-dot intermediate-band solar cells with inverted band alignment [J] . Franceschetti A, Lany S, Bester G Physica, E. Low-dimensional systems & nanostructures . 2008,第1期

机译：具有反向带取向的量子点中带太阳能电池
4. Modification of band alignment at interface of Al_yGa_(1-y)Sb/Al_xGa_(1-x)As type-Ⅱ quantum dots by concentrated sunlight in intermediate band solar cells with separated absorption and depletion regions [C] . A. Kechiantz, A. Afanasev, J.-L. Lazzari Physics, simulation, and photonic engineering of photovoltaic devices II . 2013

机译：吸收和耗尽区分开的中间带太阳能电池中的聚光太阳光对Al_yGa_（1-y）Sb / Al_xGaGa（1-x）AsⅡ型量子点界面处的能带排列的修改
5. Growth and Characterization of Type-II Submonolayer ZnCdTe/ZnCdSe Quantum Dot Superlattices for Efficient Intermediate Band Solar Cells. [D] . Dhomkar, Siddharth. 2015

机译：高效中带太阳能电池II型亚单层ZnCdTe / ZnCdSe量子点超晶格的生长和表征。
6. Improved performance and stability in quantum dot solar cells through band alignment engineering [O] . Chia-Hao M. Chuang, Patrick R. Brown, Vladimir Bulović, -1

机译：通过能带对齐工程提高了量子点太阳能电池的性能和稳定性
7. Tuning up the performance of GaAs-based solar cells by inelastic scattering on quantum dots and doping of AlyGa1-ySb type-II dots and AlxGa1-xAs spacers between dots [O] . Kechiantz, A., Afanasev, A. 2013

机译：用非弹性方法调整Gaas基太阳能电池的性能散射量子点和掺杂alyGa1-ysb型-II点和点之间的alxGa1-xas间隔物

Modification of band alignment at interface of AlyGa1-ySb/AlxGa1-xAs type-II quantum dots by concentrated sunlight in intermediate band solar cells with separated absorption and depletion regions

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